CPFEM simulations of grain size effect in FCC polycrystals: a new approach based on surface GND density

CPFEM simulations of grain size effect in FCC polycrystals: a new approach based on surface GND density

A multiscale modeling methodology involving discrete dislocation dynamics (DDD) and crystal plasticity finite element method (CPFEM) is used to study the physical origin and to simulate the grain size effect in FCC polycrystalline plasticity. This model is based on the dislocation density storage–recovery framework, expanded on the scale of slip systems. DDD simulations are used to establish a constitutive law incorporating the main dislocation mechanisms controlling strain hardening in monotonically deformed FCC polycrystals. This is achieved by calculating key quantities controlling the accumulation of the forest dislocation density within the grains and the polarized dislocation density at the grain boundaries during plastic deformation. The model is then integrated into the CPFEM at the polycrystalline aggregate scale to compute short- and long-range internal stresses within the grains. These simulations quantitatively reproduce the deformation curves of FCC polycrystals as a function of grain size. Because of its predictive ability to reproduce the Hall-Petch law, the proposed framework has a great potential for further applications.

Speaker: Maoyuan Jiang

Date and Location: Monday 09/03/20 14h00, LEM meeting room (E2.01.20), Châtillon.

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